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FLC257MH-6

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FLC257MH-6 Image

The FLC257MH-6 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6.4 GHz, Power 32.5 to 34 dBm, Power(W) 1.78 to 2.51 W, P1dB 32.5 to 34 dBm, Power Gain (Gp) 8 to 9 dB. Tags: Flanged. More details for FLC257MH-6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC257MH-6
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 6.4 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C-Band, General Purpose
  • Application
    General Purpose
  • Frequency
    6.4 GHz
  • Power
    32.5 to 34 dBm
  • Power(W)
    1.78 to 2.51 W
  • P1dB
    32.5 to 34 dBm
  • Power Gain (Gp)
    8 to 9 dB
  • Power Added Effeciency
    0.36
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1000 to 1500 mA
  • Thermal Resistance
    8 to 10 Degree C/W
  • Package Type
    Flanged
  • Package
    MH
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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