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FLK027WG Image

The FLK027WG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 14.5 GHz, Power 23 to 24 dBm, Power(W) 0.2 to 0.25 W, P1dB 23 to 24 dBm, Power Gain (Gp) 6 to 8 dB. Tags: Flanged. More details for FLK027WG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLK027WG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, Ku-Band, General Purpose
  • Application
    X Band, Ku Band, General Purpose
  • Frequency
    14.5 GHz
  • Power
    23 to 24 dBm
  • Power(W)
    0.2 to 0.25 W
  • P1dB
    23 to 24 dBm
  • Power Gain (Gp)
    6 to 8 dB
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    100 to 150 mA
  • Thermal Resistance
    40 to 80 Degree C/W
  • Package Type
    Flanged
  • Package
    WG
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

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