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The FLK027XP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 14.5 GHz, Power 23 to 24 dBm, Power(W) 0.2 to 0.25 W, P1dB 23 to 24 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Chip. More details for FLK027XP can be seen below.
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
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