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FLL177ME

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The FLL177ME from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 31.5 to 32.5 dBm, Power(W) 1.41 to 1.78 W, P1dB 31.5 to 32.5 dBm, Power Gain (Gp) 11.5 to 12.5 dB. Tags: Flanged. More details for FLL177ME can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLL177ME
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2.3 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band, Base Station
  • Application
    L Band, Base Station
  • Frequency
    2.3 GHz
  • Power
    31.5 to 32.5 dBm
  • Power(W)
    1.41 to 1.78 W
  • P1dB
    31.5 to 32.5 dBm
  • Power Gain (Gp)
    11.5 to 12.5 dB
  • Power Added Effeciency
    0.46
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    600 to 900 mA
  • Thermal Resistance
    15 to 20 Degree C/W
  • Package Type
    Flanged
  • Package
    ME
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
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