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FLL200IB-2

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The FLL200IB-2 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 41.5 to 42.5 dBm, Power(W) 14.13 to 17.78 W, P1dB 41.5 to 42.5 dBm, Power Gain (Gp) 10 to 13 dB. Tags: Flanged. More details for FLL200IB-2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLL200IB-2
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2.3 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band, Base Station
  • Application
    L Band, Base Station
  • Frequency
    2.3 GHz
  • Power
    41.5 to 42.5 dBm
  • Power(W)
    14.13 to 17.78 W
  • P1dB
    41.5 to 42.5 dBm
  • Power Gain (Gp)
    10 to 13 dB
  • Power Added Effeciency
    0.34
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    4800 to 12000 mA
  • Thermal Resistance
    1.6 to 1.8 Degree C/W
  • Package Type
    Flanged
  • Package
    IB
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 80 Degree C

Technical Documents
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