1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLL400IP-2

FLL400IP-2

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLL400IP-2 Image

The FLL400IP-2 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 1.96 GHz, Power 44.5 to 45.5 dBm, Power(W) 28.18 to 35.48 W, P1dB 44.5 to 45.5 dBm, Power Gain (Gp) 9 to 10 dB. Tags: Flanged. More details for FLL400IP-2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLL400IP-2
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 1.96 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band, PCS/PCN, Base Station
  • Application
    Base Station, Cellular
  • Frequency
    1.96 GHz
  • Power
    44.5 to 45.5 dBm
  • Power(W)
    28.18 to 35.48 W
  • P1dB
    44.5 to 45.5 dBm
  • Power Gain (Gp)
    9 to 10 dB
  • Power Added Effeciency
    0.44
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    6000 to 16000 mA
  • Thermal Resistance
    1 to 1.4 Degree C/W
  • Package Type
    Flanged
  • Package
    IP
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
View similar products