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FLM0910-12F

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The FLM0910-12F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.5 to 10.5 GHz, Power 39.5 to 40.5 dBm, Power(W) 8.91 to 11.22 W, P1dB 39.5 to 40.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flanged. More details for FLM0910-12F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM0910-12F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 9.5 to 10.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Radar, Communication, Wireless Infrastructure
  • Application Type
    X-Band, Communication and Radar Bands
  • Application
    X Band, Radar
  • Frequency
    9.5 to 10.5 GHz
  • Power
    39.5 to 40.5 dBm
  • Power(W)
    8.91 to 11.22 W
  • P1dB
    39.5 to 40.5 dBm
  • Power Gain (Gp)
    6 to 7 dB
  • Power Added Effeciency
    0.25
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    3500 to 4500 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.3 to 2.6 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 6000 to 9000 A, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 80 Degree C, Forward Gate Current : 32 mA, Channel Temperature : 175 Degree C

Technical Documents
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