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FLM0910-25F

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The FLM0910-25F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.5 to 10.5 GHz, Power 43 to 44 dBm, Power(W) 19.95 to 25.12 W, P1dB 43 to 44 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flanged. More details for FLM0910-25F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM0910-25F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 9.5 to 10.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    X-Band, Communication
  • Application
    X Band, Communication System
  • Frequency
    9.5 to 10.5 GHz
  • Power
    43 to 44 dBm
  • Power(W)
    19.95 to 25.12 W
  • P1dB
    43 to 44 dBm
  • Power Gain (Gp)
    6 to 7 dB
  • Power Added Effeciency
    0.3
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    6500 to 7200 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.4 to 1.6 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 10800 to 16200 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 64 mA, Channel Temperature : 175 Degree C

Technical Documents
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