Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM5053-35F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.0 to 5.3 GHz, Power 45.5 dBm, Power(W) 35.48 W, P1dB 45.5 dBm, Power Gain (Gp) 8 dB. Tags: Flanged. More details for FLM5053-35F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLM5053-35F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 5.0 to 5.3 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • Frequency
    5.0 to 5.3 GHz
  • Power
    45.5 dBm
  • Power(W)
    35.48 W
  • P1dB
    45.5 dBm
  • Power Gain (Gp)
    8 dB
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 Degree C/W
  • Package Type
    Flanged
  • Package
    IB
  • Operating Temperature
    25 Degree C