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FLM5964-6F

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FLM5964-6F Image

The FLM5964-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.9 to 6.4 GHz, Power 37.5 to 38.5 dBm, Power(W) 5.62 to 7.08 W, P1dB 37.5 to 38.5 dBm, Power Gain (Gp) 9 to 10 dB. Tags: Flanged. More details for FLM5964-6F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM5964-6F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 5.9 to 6.4 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • Frequency
    5.9 to 6.4 GHz
  • Power
    37.5 to 38.5 dBm
  • Power(W)
    5.62 to 7.08 W
  • P1dB
    37.5 to 38.5 dBm
  • Power Gain (Gp)
    9 to 10 dB
  • Power Added Effeciency
    0.37
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1625 to 1900 mA
  • IMD
    -46 to -44 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    4 to 4.8 Degree C/W
  • Package Type
    Flanged
  • Package
    IK
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 2500 to 3750 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 80 Degree C

Technical Documents
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