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FLM7785-6F

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FLM7785-6F Image

The FLM7785-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 37.5 to 38.5 dBm, Power(W) 5.62 to 7.08 W, P1dB 37.5 to 38.5 dBm, Power Gain (Gp) 7.5 to 8.5 dB. Tags: Flanged. More details for FLM7785-6F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM7785-6F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 7.7 to 8.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band
  • Application
    C Band, Communication System
  • Frequency
    7.7 to 8.5 GHz
  • Power
    37.5 to 38.5 dBm
  • Power(W)
    5.62 to 7.08 W
  • P1dB
    37.5 to 38.5 dBm
  • Power Gain (Gp)
    7.5 to 8.5 dB
  • Power Added Effeciency
    0.31
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1750 to 2250 mA
  • IMD
    -46 to -44 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    4 to 4.8 Degree C/W
  • Package Type
    Flanged
  • Package
    IB
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 2700 to 4050 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

Technical Documents
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