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SGC0910-200A-R

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SGC0910-200A-R Image

The SGC0910-200A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.2 to 10.5 GHz, Power 51.5 to 53.5 dBm, Power(W) 141.25 to 223.87 W, Gain 7.5 to 9.5 dB, Power Added Effeciency 0.38. Tags: Flanged. More details for SGC0910-200A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGC0910-200A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 9.2 to 10.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    X-Band, C-Band, Radar
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    9.2 to 10.5 GHz
  • Power
    51.5 to 53.5 dBm
  • Power(W)
    141.25 to 223.87 W
  • Pulsed Width
    100 usec
  • Gain
    7.5 to 9.5 dB
  • Power Added Effeciency
    0.38
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Current
    11.8 to 14.5 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.6 to 0.8 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 22 A, Gain Flatness : 1 dB, Forward Gate Current : 12 mA, Reverse Gate Current : -9 mA

Technical Documents
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