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The SGC0910-300A-R from Sumitomo is a GaN-HEMT that operates from 9 to 10 GHz for radar applications. It delivers an output power of 55.3 dBm and gain of 9.3 dB with a power added efficiency of 35%. This device is internally matched for X-band radar bands to provide optimum power and gain in a 50 Ohm system. It is available in a hermetically sealed package and is ideal for radar applications.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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