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SGK5254-120A-R

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The SGK5254-120A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.2 to 5.4 GHz, Power 551.5 dBm, Power(W) 100 to 141.25 W, Gain 15 to 16.5 dB, Power Added Effeciency 0.47. Tags: Flanged. More details for SGK5254-120A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK5254-120A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    X-Band, C-Band, Radar
  • Application
    X Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    5.2 to 5.4 GHz
  • Power
    551.5 dBm
  • Power(W)
    100 to 141.25 W
  • Pulsed Width
    100 usec
  • Gain
    15 to 16.5 dB
  • Power Added Effeciency
    0.47
  • Transconductance
    12 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    11.6 to 16.2 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.65 to 0.85 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 26 A, Gain Flatness : 1 dB, Forward Gate Current : 24.4 mA, Reverse Gate Current : -12.8 mA

Technical Documents
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