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SGK7785-100A

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The SGK7785-100A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 49 to 50 dBm, Power(W) 79.43 to 100 W, Gain 11 to 12 dB, Power Added Effeciency 0.42. Tags: Flanged. More details for SGK7785-100A can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK7785-100A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Broadcast, Wireless Infrastructure
  • Application Type
    C-Band, Radio Link, SATCOM
  • Application
    Radio
  • CW/Pulse
    CW
  • Frequency
    7.7 to 8.5 GHz
  • Power
    49 to 50 dBm
  • Power(W)
    79.43 to 100 W
  • Gain
    11 to 12 dB
  • Power Added Effeciency
    0.42
  • Transconductance
    12 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    10 to 14 A
  • Power Dissipation (Pdiss)
    300 W
  • IMD
    -25 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.55 to 0.75 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 26 A, Gain Flatness : 1.6 dB, Forward Gate Current : 24.4 mA, Reverse Gate Current : -12.8 mA

Technical Documents
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