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SGNE045MK

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The SGNE045MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.2 GHz, Power 46.5 to 47.5 dBm, Power(W) 44.66 to 56.2 W, Saturated Power 46.5 to 47.5 dBm, Gain 15 to 16 dB. Tags: Flanged. More details for SGNE045MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGNE045MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Type
    L-Band
  • Application
    General Purpose
  • CW/Pulse
    CW
  • Frequency
    2.2 GHz
  • Power
    46.5 to 47.5 dBm
  • Power(W)
    44.66 to 56.2 W
  • Saturated Power
    46.5 to 47.5 dBm
  • Gain
    15 to 16 dB
  • Power Added Effeciency
    0.55
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    125 W
  • Thermal Resistance
    1.4 to 1.8 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 62 mA, Reverse Gate Current : -3.6 mA

Technical Documents
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