The CHK5010-99F from United Monolithic Semiconductors (UMS) is an RF Power Transistor that operates from 2 to 12 GHz. It delivers a saturated output power of 4 W (~36 dBm) with a small signal gain of 21.6 dB and a power-added efficiency of 72%. This transistor supports both CW and pulsed operating modes. It is manufactured using GaN HEMT technology on a SiC substrate and requires a DC supply of 30 V. The transistor is available are a bare die that measures 0.90 x 0.80 x 0.10 mm and is ideal for general purposes RF power applications.
