The CHK8015-99F from UMS is a Gallium Nitride High Electron Mobility Transistor that operates up to 18 GHz. It provides 20 watts of power with 17 dB of signal gain and a power added efficiency of 68% @ 9 GHz. This device requires a 30 V supply and has been designed for a variety of RF power applications. It is available as a bare die that measures 0.88 x 2 x 0.1 mm. The circuit is manufactured using a 0.25µm gate length GaN HEMT technology on SiC substrate and requires an external matching circuitry.
