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CHK9014-99F

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The CHK9014-99F from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 13 GHz, Power 47.4 dBm, Power(W) 55 W, Saturated Power 60 W, Small Signal Gain 13 dB. Tags: Die. More details for CHK9014-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHK9014-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    DC to 13 GHz Low Noise GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 13 GHz
  • Power
    47.4 dBm
  • Power(W)
    55 W
  • Saturated Power
    60 W
  • Small Signal Gain
    13 dB
  • Power Added Effeciency
    0.5
  • Supply Voltage
    30 V
  • Threshold Voltage
    80 V
  • Drain Gate Voltage
    120 V
  • Breakdown Voltage - Drain-Source
    55 V
  • Voltage - Gate-Source (Vgs)
    -3.3 to -20 V
  • Drain Current
    3.6 A
  • Quiescent Drain Current
    0.7 to 1.6 A
  • Gate Leakage Current (Ig)
    -2.8 mA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    1.3 Degree C/W
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Gate Currnet Forward Mode : 55 mA, Pich Off Voltage : -4 to -2.8 V, Saturated Drain Current : 12.5 A

Technical Documents
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