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CHZ015A-QEG

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The CHZ015A-QEG from United Monolithic Semiconductors is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 41.76 dBm, Power(W) 15 W, Duty_Cycle 0.1, Small Signal Gain 18 to 19.5 dB. Tags: Surface Mount. More details for CHZ015A-QEG can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHZ015A-QEG
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    1.2 to 1.4 GHz Low Noise GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.2 to 1.4 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Pulsed Width
    1.5 mS
  • Duty_Cycle
    0.1
  • Small Signal Gain
    18 to 19.5 dB
  • Supply Voltage
    45 V
  • Drain Gate Voltage
    200 V
  • Breakdown Voltage - Drain-Source
    20 to 50 V
  • Voltage - Gate-Source (Vgs)
    -1.9 V
  • Drain Current
    0.65 A
  • Quiescent Drain Current
    0.1 to 0.35 A
  • Gate Leakage Current (Ig)
    -1 mA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    5.5 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Gate Currnet Forward Mode : 0 to 8 mA, Pich Off Voltage : -3 to -1 V, Saturated Drain Current : 2.7 A

Technical Documents
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