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The CHZ180AaSEB from United Monolithic Semiconductors is an L-Band GaN HEMT Transistor that operates from 1.2 to 1.4 GHz. It provides 180 W of saturated output power with a gain of 20 dB and has a PAE of 52%. This pulsed device has a pulse width of 3 ms and a duty cycle of 20%. The CHZ180AaSEB is manufactured using a GaN HEMT process with 0.5μm gate length and is based on Quasi-MMIC technology. It is available in hermetic flanged ceramic metal power package that provides low parasitic and thermal resistance. The amplifier is suited for L-band and pulse radar applications.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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