The CHZ180AaSEB from United Monolithic Semiconductors is an L-Band GaN HEMT Transistor that operates from 1.2 to 1.4 GHz. It provides 180 W of saturated output power with a gain of 20 dB and has a PAE of 52%. This pulsed device has a pulse width of 3 ms and a duty cycle of 20%.
The CHZ180AaSEB is manufactured using a GaN HEMT process with 0.5μm gate length and is based on Quasi-MMIC technology. It is available in hermetic flanged ceramic metal power package that provides low parasitic and thermal resistance. The amplifier is suited for L-band and pulse radar applications.
