WP28020025

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)

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The WP28020025 from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency DC to 20 GHz, Power 43.98 dBm, Power(W) 25 W, Saturated Power 25 W, Small Signal Gain 10 dB. Tags: Die. More details for WP28020025 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP28020025
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    25 W, GaN HEMT Transistor from DC to 20 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, SATCOM
  • Application Type
    Drone, UAV, Satellite, Communications
  • CW/Pulse
    CW
  • Frequency
    DC to 20 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • Saturated Power
    25 W
  • Small Signal Gain
    10 dB
  • Transconductance
    340 mS/mm
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.4 V
  • Breakdown Voltage
    100 V
  • Drain Efficiency
    20%
  • Drain Current
    1000 to 1050 mA/mm
  • Quiescent Drain Current
    380 mA
  • IMD
    -30 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    5934 x 718 um
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain Source Current :1000 to 1050 mA/mm, Ohmic contact resistance : 0.4 Ohms

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