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WP2816P0010MH

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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The WP2816P0010MH from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency DC to 18 GHz, Power 36 dBm, Power(W) 4 W, Saturated Power 8 to 10 W, Duty_Cycle 10%. Tags: Flanged. More details for WP2816P0010MH can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP2816P0010MH
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    4 W, GaN HEMT Transistor from DC to 18 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Test & Measurement, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 18 GHz
  • Power
    36 dBm
  • Power(W)
    4 W
  • Saturated Power
    8 to 10 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Small Signal Gain
    9.7 dB
  • Power Added Effeciency
    26.20%
  • VSWR
    10.00:1
  • Supply Voltage
    28 to 32 V
  • Threshold Voltage
    -3.1 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    26.20%
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    300 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : 2.2 V, Pulsed Drain Efficiency : 26.2%

Technical Documents
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