The WP282P10020MH from WAVEPIA is a GaN HEMT that operates from 2 to 2.2 GHz. It delivers a saturated output power of 20 W with a gain of 13.7 dB and has a drain efficiency of 50%. This 50-ohm transistor requires a DC supply of 28 V and consumes less than 1 A of current. It is available in a surface-mount package that measures 24.0 x 17.6 mm and is suitable for use in broadband amplifiers, cellular infrastructure, test instrumentation, and radar applications.
