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WP48007104

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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The WP48007104 from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency DC to 8 GHz, Power 50.17 dBm, Power(W) 103.99 W, Saturated Power 104 W, Small Signal Gain 12 to 14 dB. Tags: Die. More details for WP48007104 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP48007104
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    104 W, GaN HEMT Transistor from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    WiMAX, LTE, WCDMA, GSM, Base Station, Communication, Drone, UAV, WPT, 5G, V2X
  • Application
    Cellular, Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 8 GHz
  • Power
    50.17 dBm
  • Power(W)
    103.99 W
  • Saturated Power
    104 W
  • Small Signal Gain
    12 to 14 dB
  • Power Gain (Gp)
    14 dB
  • Transconductance
    290 mS/mm
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.4 V
  • Breakdown Voltage
    160 V
  • Drain Efficiency
    0.6
  • Drain Current
    1000 mA/mm
  • Quiescent Drain Current
    600 mA
  • IMD
    -30 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    3710 x 850 um
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain Source Current :1000 mA/mm, Ohmic contact resistance : 0.3 Ohms

Technical Documents
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