WP485P03025(60)MH

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)

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WP485P03025(60)MH Image

The WP485P03025(60)MH from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency DC to 6 GHz, Power 43.98 dBm, Power(W) 25 W, Saturated Power 25 to 30 W, Small Signal Gain 14.5 dB. Tags: Flanged. More details for WP485P03025(60)MH can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP485P03025(60)MH
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    25 W, GaN HEMT Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • Saturated Power
    25 to 30 W
  • Small Signal Gain
    14.5 dB
  • Power Gain (Gp)
    11.5 dB
  • Power Added Effeciency
    26%
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.1 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    26%
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    300 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : '-2.79 V,Pulse Drain Efficiency : 26%

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