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WG028031350I

RF Transistor by WAVICE (32 more products)
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The WG028031350I from WAVICE is a RF Transistor with Frequency 2.8 to 3.1 GHz, Power 55.44 dBm, Power(W) 349.95 W, Saturated Power 350 W, Power Gain (Gp) 11 dB. Tags: Flanged. More details for WG028031350I can be seen below.

Product Specifications

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Product Details

  • Part Number
    WG028031350I
  • Manufacturer
    WAVICE
  • Description
    350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    Radar System
  • Application
    Radar
  • CW/Pulse
    CW
  • Frequency
    2.8 to 3.1 GHz
  • Power
    55.44 dBm
  • Power(W)
    349.95 W
  • Saturated Power
    350 W
  • Power Gain (Gp)
    11 dB
  • Power Added Effeciency
    58%
  • Supply Voltage
    50 V
  • Package Type
    Flanged
  • Grade
    Commercial
View details on the manufacturer's website
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