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WGB01002120F

RF Transistor by WAVICE (32 more products)
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The WGB01002120F from WAVICE is a RF Transistor with Frequency 1 to 2 GHz, Power 50.79 dBm, Power(W) 119.95 W, Saturated Power 120 W, Power Gain (Gp) 10 dB. Tags: Flanged. More details for WGB01002120F can be seen below.

Product Specifications

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Product Details

  • Part Number
    WGB01002120F
  • Manufacturer
    WAVICE
  • Description
    120 W, GaN on SiC Power Transistor from 1 to 2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    Electronic Warfare
  • CW/Pulse
    CW
  • Frequency
    1 to 2 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • Saturated Power
    120 W
  • Power Gain (Gp)
    10 dB
  • Supply Voltage
    50 V
  • Package Type
    Flanged
  • Grade
    Commercial, Military
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