Trending GaN Products in September 2015

The AMP1095 from Exodus Advanced Communications is a GaN solid state power amplifier that operates from 4 GHz to 18 GHz. It provides a power gain of 46 dB, has a VSWR of 5:1 and harmonics of more than 15 dB. The amplifier provides an output power (Psat) up to 30 W and P1dB of 20 W with a return loss up to 10 dB. It requires a supply of 32 Vdc and draws 19 A of current. It is available with SMA Male/Female connectors in a module that measures 170 x 180 x 27 mm.

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The CGHV31500F from Cree is a GaN HEMT that operates from 2700 MHz to 3100 MHz. It provides a saturated output power up to 600 Watts, has a power gain of 12.75 dB and efficiency of up to 60%. The transistor is available in a ceramic/metal flange package and is ideal for S-Band Radar Applications.

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The RFCM3316 is a power doubler amplifier in a multi-chip module to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. based on RFMDs GaN and allows cable operators and MSOs to easily upgrade existing CATV infrastructure to meet the power amplifier requirements of the new DOCSIS 3.1 standard, increasing effective downstream data rates from 160 Megabits per second (Mb/s) to 10 Gigabits per second (Gbit/s), and upstream data rates from 120 Mb/s to 1 Gbit/s when compared to DOCSIS 3.0. The RFCM3316 operates from 40MHz to 1200MHz and provides an extremely high output level of 60dBmV under a 1.2GHz channel loading with 10-10 BER and 42dB MER and -80dB CTB and -80dB CSO. This modular, surface mount device saves about 50 percent in board space compared to traditional SOT115J packages, while maintaining excellent linearity and ruggedness. Due to the efficient nature of the GaN process, the product can also operate at 20% less current than Gallium Arsenide-based products at a comparable distortion level.

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The MAGX-100027-100C0P is a wideband transistor that operates from DC to 2.7 GHz. It is the first transistor that has been developed on MACOM's 4th generation GaN on Silicon (GaN on Si) process. This process provides performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology. The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100 W (50 dBm). Featuring 50 V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency. For pulsed operation, it provides 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

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The DM-X1K0-01 is a 1KW GaN Pulsed Amplifier that has been designed as a compact alternative to vacuum tube amplifiers (TWT). It operates at X-Band Frequencies with a center frequency of 9.5 GHz and a 1.2 GHz bandwidth. The amplifier offers pulsed widths up to 100 μs with duty cycles up to 20%. This ultra-compact amplifier measures only 244mm x 134mm x 50mm excluding heatsink and connectors.

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