Integra to Exhibit its GaN/SiC Transistors at IMS 2018
Integra Technologies will be exhibiting at this year’s International Microwave Symposium, from 12-14 June, 2018 in Philadelphia.
Integra will be exhibiting the IGT5259L50, a fully-matched, GaN/SiC transistor, offering 50 Watts from 5 - 6 GHz, designed for pulsed C-band radar applications. They will also be exhibiting IGN1214L500B, a high-power GaN-on-SiC HEMT transistor, that supplies 500 Watts from 1.2 - 1.4 GHz with 15.5 dB gain and 65% efficiency from a 50V drain bias. This transistor is designed for L-band radar long-pulse applications.
Along with these products, Integra will be featuring upcoming products to be released in the future, at C and X-bands (going higher in frequency) and in terms of pallets (2000W, going higher in power). Click here to read more.