New GaN Transistor for RF Energy Exceeds the Efficiency of Most Magnetrons
At IMS 2019 in Boston this week, NXP Semiconductors released its first RF power transistor designed for RF energy using Gallium Nitride on Silicon-Carbide (GaN-on-SiC). Leveraging the high efficiency of GaN, the new MRF24G300HS exceeds the efficiency of most magnetrons at 2.45 GHz, while the high thermal conductivity of SiC helps to ensure Continuous Wave (CW) operations.
For more than 50 years, 2.45 GHz magnetrons have been widely used in consumer and industrial applications ranging from microwave ovens to high power welding machines. Solid-state solutions appeared on the market several years ago, bringing advanced control, reliability, and ease of use. The capability to dynamically adjust the power, frequency, and phase helps optimize the energy transmitted to the material or food being heated. The long lifetime of transistors at full rated performance reduces the need for replacements. However, until the advent of GaN-on-SiC for RF Energy, solid-state devices lacked efficiency to meet the performance standards of the incumbent magnetrons. Click here to read more.
