Thermal Characteristics of ART LDMOS Power Transistors

The laterally diffused metal oxide semiconductor (LDMOS) power device offers exceptional RF performance while increasing the efficiency and reliability of power amplifiers. Ampleon introduced the first family of LDMOS devices based upon Advanced Rugged Technology (ART), built to handle the toughest conditions in industrial, scientific,and medical applications. The ART LDMOS offers higher efficiency and lower power dissipation compared to other LDMOS transistors, but still operates at high power with high heat dissipation. To ensure safe operation, a thorough thermal characterization and model are necessary. In targeted applications, thermal design is crucial for improving system reliability and delivering cost-efficient, energy-saving RF performance. This document focuses on the thermal characterization of ART LDMOS.