TechNavio has released a report that forecasts the Global GaN Semiconductor Devices market to grow at a CAGR of 26.9% from 2014 to 2018. Gallium Nitride (GaN) is a wide band gap semiconductor material with properties such as high saturation velocity and high breakdown voltage. These properties make it an ideal choice for for high power applications in high-voltage switching devices such as radio frequency (RF) power amplifiers. GaN semiconductor devices are smaller, lighter, tougher, and more efficient than silicon semiconductor devices and are hence used to replace silicon in semiconductor devices. These devices find applications across several sectors such as Defense and Aerospace, Consumer Electronics, ICT, and Automotive. The price has been a major factor holding back mass adoption of GaN, however mass adoption will soon help drive this down.
TechNavio’s report covers the present scenario and the growth prospects of the Global GaN Semiconductor Devices market for the period 2014-2018. To calculate the market size, the report considers the revenue generated from the sales of GaN semiconductor devices worldwide. The report does not take into consideration the following while calculating the market size:
- Support or maintenance services that are offered for/with GaN semiconductor devices
- Components that are used in the production of GaN semiconductor devices
- Aftermarket sales of GaN semiconductor devices
TechNavio's report, the Global GaN Semiconductor Devices Market 2014-2018, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the APAC region, Europe, North America, and the ROW; it also covers the Global GaN Semiconductor Devices market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.
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