Gen 4 GaN Technology for RF Energy Applications at European Microwave Week (EuMW) 2015

MACOM will demonstrate their broad Gallium Nitride (GaN) RF product and technology portfolio at the European Microwave Week (EuMW 2015), from 6 to 11 Septermber in Paris. MACOM’s booth will feature its revolutionary Gen 4 GaN on Silicon RF product solutions optimized for spanning industrial, scientific, medical, E-Band point-to-point wireless and X-Band radar applications. At volume production levels, Gen 4 GaN technology is expected to yield devices that achieve better performance, higher efficiency and lower cost/watt when compared to LDMOS products. These products are also significantly lower in cost when compared to GaN on Silicon Carbide wafers.

Leveraging deep domain experience and as a member of the RF Energy Alliance, MACOM brings GaN RF technology into mainstream applications, including RF ignition systems, solid-state cooking and high-lumen plasma lighting.

Stop by the MACOM Booth #235 to see their complete GaN portfolio and live demonstrations, including:

• Guest Speaker: Klaus Werner talks about the future of RF Energy at 3:00PM, Wednesday, September 9, 2015;
• Gen4 GaN on Silicon: State of the art process that enables GaN on Silicon Carbide performance below LDMOS cost structures;
• RF Energy: Applications achieve higher efficiency and excellent gain at a lower cost structure; and
• Multifunction Phased Array Panel: Come see MACOM’s Static Multifunction Phased Array (MPAR) Panel that supports today’s challenging civil and military radar applications.

See MACOM’s experts present papers on the latest in RF & Microwave