PRFI reports the successful completion of a 5.5 W (37.4 dBm) mmWave GaN-on-SiC Power Amplifier development for CML Micro, a UK supplier of RF and microwave MMICs. It covers a frequency range of 27.5 to 31GHz and has been optimized to provide a cost-effective solution for high-volume Ka-band satcom and FR2 5G applications. 50Ω RF input and output and dual-side biasing simplify integration into an RF subsystem.
The PA was designed on a world-leading 0.15 µm GaN-on-SiC process and packaged in an air-cavity plastic QFN package measuring 4x4 mm that was optimized for RF and thermal performance. Further details will be available from CML Micro (booth #551) at the International Microwave Symposium (IMS) in Washington DC, June 18-20.
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