MACOM has introduced a family of HMIC (Heterolithic Microwave Integrated Circuit) silicon PIN diode switches in conjunction with the MABT-011000-1423, a fully monolithic broadband surface mount bias network. The SPDT MASW-002103-1363, SP3T MASW-003103-1364, and the SP4T MASW-004103-1365 are available in frequency configurations up to 26 GHz.
These devices have been designed for use in broadband, low to moderate signal and high-performance switch applications. Fully monolithic and rugged with a glass encapsulation, these switches all feature sets of series and shunt connected PIN diodes.
Conducive to achieving high-performance and minimizing the parasitics, these switches were fabricated using MACOM’s patented HMIC process, resulting in low loss and high isolation through low millimetre-wave frequencies. To protect the junction and airbridges during handling and assembly, the topside of the devices have been fully encapsulated with silicon nitride and an additional layer of polymer. Gold metalized pads have been added to the back of the switches to produce a high functioning, solderable surmount device.
The MABT-011000-1423 is a bias network for PIN diode control circuits that has been designed for customers in need of a rugged, high-performance device with exceptional repeatability through millimeter frequencies. The HIMC process minimizes the parasitics to enable a high isolation, low insertion solutions for our customers. The large vias reduces inductance, allowing customers to easily solder down the part, while the gold backside metallization provides RF and DC grounding. The MABT-011000-1423 acts as both an RF-DC de-coupling network as well as the DC return, and contains a series DC blocking capacitor. DC currents up to 60 mA and DC voltages up to 50 V may be used to maximize performance from the device.
Production quantities and samples of MASW-003103-1364, MASW-004103-1365, MASW-002103-1363 and MABT-01100-1423 are available from stock.
