Integra Technologies has announced the completion of a 1kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards. An additional 200 W high efficiency GaN amplifier for shorter-term programs has also been completed through an SBIR Phase IIX grant award.
The IGNP0450M1000 GaN Amplifier operates from 420 to 450 MHz, provides 1kW of power, a gain of 42 dB and an efficiency of 75%. This GaN amplifier for radar applications has a switching speed of 100us with 10% pulse conditions. It requires a 75 V supply voltage across the case temperature range from -25°C to +85°C. The amplifier weighs only 350 gms. and it’s smaller than today’s tablets.
“GaN technology’s inherent low capacitances, on-state resistance and high bias operation facilitate high efficiency high power amplifier designs through harmonic tuning”, say Principal Investigator James Custer and lead scientist Dr. Gabriele Formicone, Integra's core technical team involved in the project.“
The 200 W and 1 kW GaN radar amplifiers have efficiencies of almost 80% and demonstrate Integra’s capabilities to support aerospace programs in other frequency bands. These amplifier products show Integra's commitment to providing solutions for various defense, commercial and scientific aerospace applications.
