Ampleon has added a new LDMOS power transistor to its family of extremely rugged power transistors designed specifically for use in high power amplifiers operating in the 10 to 500 MHz. Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700 Watt CW or 1,900 Watt pulsed.
The BLF189XR will be available in two variants. The BLF189XRB delivers 40% more output power than the BLF188XR (1900 Watts pulsed) and is aimed at applications working at frequencies up to 150 MHz. The second product will be the BLF189XRA, can deliver 20% more output power compared to the current BLF188XR (1700 Watts pulsed), and is optimized to operate across the entire band up to 500 MHz.
The rugged BLF189XR provides excellent efficiency in a small package with a very low cost per watt. It enables customers to deliver high power by reducing the number of transistors required to build a high power system. This transistor has been developed using Ampleon’s industry respected ‘XR’ extremely rugged Gen6HV LDMOS 50 V process technology.
In addition to FM broadcast applications, the this transistor can be used for industrial, scientific and medical equipment include plasma generators, medical scanners and particle accelerators. Industrial RF heating, drying and thawing are other possible uses.
The BLF189XR is constructed in an SOT539A package. An optional earless flanged SOT539B package device, the BLF189XRS, is also available. It will be available in sampling quantities toward the end of this year with general availability approximately four months later. Its sister device, BLF189XRA, will sample by January 2017, with release during 2nd quarter of 2017.
