Peregrine Semiconductor has started volume production of their UltraCMOS 60 GHz RF SOI switches. The PE42525 and PE42525 extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology.
Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds. The PE42525 is ideal for test-and-measurement (T&M) equipment, microwave-backhaul solutions and higher frequency switching in 5G systems. The PE42525 boasts an extended temperature range making it desirable for harsh-environment applications in industrial markets.
The PE42525 and PE42525 join Peregrine’s high frequency product portfolio, which includes multiple switches, an image-reject mixer and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.
Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE42525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver an incredibly fast switching speed of 8 nanoseconds and RF RISE/FALL time of 3 nanoseconds. Both switches have a low current of 390 nanoamperes. With exceptional performance across all key RF specifications, these switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and excellent ESD protection of 1 kV HBM. At 50 GHz, both switches exhibit port-to-port isolation of 37 dB and insertion loss of 1.9 dB. The PE42525 also has an extended temperature range from -55 to +125 degrees Celsius. They are available as a flip-chip die with 500 microns bump pitch - the best form factor for high frequency performance as it eliminates performance variations due to wire-bond length. Production parts and evaluation kits are available now.
