GLOBALFOUNDRIES has announced the availability of a new set of enhanced RF SOI process design kits (PDKs) to help designers improve RF switch designs and deliver differentiated RF front-end solutions for a wide range of markets including front-end modules for mobile devices, mmWave, 5G and other high-frequency applications.
GF’s advanced RF technology platform, 7SW SOI, is optimized for multi-band RF switching in next-generation smartphones and is poised to drive innovation in Internet of Things (IoT) applications. Designed for use with Coupling Wave Solutions’ (CWS) simulation tool, SiPEX, the 7SW SOI PDK allows designers to integrate RF switches with other critical RF blocks that are essential to the design of complex electronic systems for future RF communication chips. Specifically, this new capability allows designers to improve RF simulation output by simulating a highly-resistive substrate parasitic effect across their entire design.
GF’s RF SOI technologies offer significant performance, integration and area advantages in front-end RF solutions for mobile devices and RF chips for high-frequency, high-bandwidth wireless infrastructure applications. CWS’ SiPEX accelerates the design of RF SOI switches by improving linearity simulation accuracy. It can also be effective in the design of low-noise amplifiers (LNA) and power amplifiers (PA), enabling designers to reduce their size to lower costs.
SiPEX is available in the current release of GF’s 7SW SOI PDK. For more information on the company’s RF SOI solutions, click here.
