Mitsubishi Electric Corporation has released a Ka-band (26 to 40 GHz) 8W gallium nitride (GaN) high-electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) amplifier for satellite earth stations. The new MGFG5H3001, which offers low distortion and an output power rating of 8W, boasts a small footprint that will help to downsize power transmitters. Mitsubishi Electric will begin shipping samples of this MMIC on November 1.
Satellite networks, which are used for high-speed communication during natural disasters and in areas where ground networks are difficult to construct, are currently implemented mainly in the C-band (4-8 GHz) and Ku-band (12-18 GHz), but higher frequencies are increasingly being used. Also, market demands for deployments in the higher-frequency Ka-band are increasing. Mitsubishi Electric's new Ka-band GaN-HEMT MMIC will help meet the growing demand for higher frequency deployments, as well as facilitate the development of satellite communications equipment capable of extra-high output power and efficiency.
Key Features of this Ka-Band GaN HEMT MMIC:
- Industry top-level output power contributes to miniaturization
- Optimized transistor configuration delivers industry top-level 8W output power
- One chip integrates amplifier transistors circuits, matching circuits and distortion-reducing linearizer
- Reduced number of parts will help to downsize satellite earth-station transmitters
- Industry top-level distortion reduction for high signal integrity and miniaturization
- Built-in linearizer achieves low distortion for power transmitters
- High signal integrity and reduced need for external linearizer for further miniaturization of satellite earth-station transmitters
- Will facilitate new satellite earth-station equipment to meet wider needs
- Expected to lead to new Ka-band and existing Ku-band equipment for deployments in more diverse frequency ranges
