ResearchAndMarkets has published a new report to provide in-depth analysis about Analog Devices ADGM1304/1004: SP4T RF MEMS Switch, 2019. The report goes over Physical features of the MEMS switch, Manufacturing Process Flow, Cost Analysis, Estimated Price Analysis & Comparisons. It also includes a physical and cost comparison with the ADGM1004 providing the resemblances and the differences between both devices.
For several years, ADI has anticipated the need for MEMS switches. The devices rely on an ohmic structure and can process up to four RF signals through one output, in Single Pole Quad-Throw (SP4T) configuration. Based on a silicon substrate, this technology allows the company to make a device smaller and faster than EMR devices with a remarkable lifetime, making it more reliable. Doing so, all the MEMS innovation makes the devices more suitable for test equipment, wireless networks and satellites. Its small form factor makes it faster in switching operation and consumes less power.
The ADGM1304 from Analog Devices is a wideband, SP4T MEMS switch with integrated driver that operates from 0 Hz/DC to 14 GHz. This RF MEMS based switch is ideal for relay replacements, automatic test equipment and RF test instrumentation. It has a switching time of 30 microseconds and an actuation lifetime of over 1 billion cycles. The switch has a high linearity with an insertion loss of 0.26 dB and isolation of 24 dB at 2.5 GHz. It can handle an input power of up to 36 dBm and requires a supply voltage of 3.1 to 3.3 Volts. An integrated control chip generates the high voltage necessary to electrostatically actuate the switch via a complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible parallel interface. All four switches are independently controllable. The ADGM1304 is available in a 24-lead, 5 mm x 4 mm x 0.95 mm lead frame chip-scale package (LFCSP).
The ADGM1004 from Analog Devices is a wideband, SP4T MEMS switch with integrated driver that operates from 0 Hz/DC to 13 GHz. This RF MEMS based switch is ideal for relay replacements, automatic test equipment and RF test instrumentation. This switch has an ESD Rating of 2.5kV HBM and hermetically sealed switch contacts. It has a switching time of 30 microseconds and an actuation lifetime of over 1 billion cycles. The switch has a high linearity with an insertion loss of 0.45 dB and isolation of 24 dB at 2.5 GHz. It can handle an input power of up to 36 dBm. An integrated control chip generates the high voltage necessary to electrostatically actuate the switch via a complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible parallel interface. All four switches are independently controllable. The ADGM1004 is available in a 24-lead, 5 mm x 4 mm x 1.45 mm lead frame chip-scale package (LFCSP).
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