News for Win Semiconductors

Read the latest news from Win Semiconductors. Our editorial team tracks the latest announcements, product launches and press releases from Win Semiconductors and creates news stories. Win Semiconductors is based in Taiwan. WIN Semiconductors was founded in October 1999, as the first pure-play 6-inch GaAs foundry in the world. everything RF leading news source for the RF & Microwave Industry. Visit our news section to read the latest news, and product launches from the leading companies in the Industry.

WIN Semiconductors Releases Moisture-Rugged 0.1µm GaAs pHEMT Technology for Advanced Amplifier Designs
- June 21, 2024
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has announced the beta release of its moisture-rugged 0.1µm pHEMT process. The PP10-29 techno... Read More
Tags:- Amplifier, GaAs, Foundry, Semiconductors
WIN Semiconductors Introduces Rugged GaN-on-SiC Platform for mmWave RF Applications
- June 19, 2024
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has expanded its portfolio of RF GaN technologies with the beta release of a highly robust mm... Read More
Tags:- Power Amplifier, GaN, mm-Wave, Semiconductors
WIN Semiconductors Unveils Next-Gen Integrated GaAs Platform for mmWave Front Ends
- June 15, 2023
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, announces the commercial release of its next-generation integrated mmWave GaAs platform, PQG3... Read More
Tags:- mm-Wave, GaAs, HEMT, Semiconductors
WIN Semiconductors Releases 50 V 0.25 µm-gate RF GaN Platform for High-Performance Front-End Applications
- June 14, 2023
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has announced the commercial release of a 50 V 0.25 µm-gate RF gallium nitride (GaN) platform... Read More
Tags:- MMIC, GaN, Foundry, Semiconductors
WIN Semiconductors Releases Second Generation High-Performance 0.1µm GaAs pHEMT Technology
- June 30, 2022
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, announced the release of its latest generation 0.1µm pHEMT technology, PP10-20. Building on t... Read More
Tags:- MMIC, mm-Wave, GaAs, Foundry, Semiconductors
WIN Semiconductors Introduces 0.12 µm RF GaN on SiC Technology
- June 27, 2022
- Win Semiconductors
WIN Semiconductors, one of the world’s largest pure-play compound semiconductor foundries has expanded its portfolio of RF GaN technologies with the release of a new gallium n... Read More
Tags:- GaN, mm-Wave, 5G, Foundry, SiC, Semiconductors
Latest Products

WiFi 6 module
Oct 05, 2024

2.4 GHz Radio Module for Bluetooth Low Energy and Proprietary Protocols
Oct 05, 2024

2.4 GHz Bluetooth 5.3 LE Audio Wireless Module
Oct 05, 2024

1.25 kW Ku-Band TWTA for Satellite Uplink Applications
Oct 05, 2024
WIN Semi Releases New Sample Kits for its GaN-on-SiC 0.15 µm-gate Technology
- October 10, 2019
- Win Semiconductors
WIN Semiconductors has announced the development of new sample kits for its gallium nitride (GaN) based 0.15µm-gate technology. The new NP15-00 mmWave compound semiconductor t... Read More
Tags:- Power Amplifier, GaN, Foundry
WIN Semiconductors Celebrates its 20 Year Anniversary
- October 03, 2019
- Win Semiconductors
WIN Semiconductors, a compound semiconductor foundry, has celebrated its 20th foundation day. Since the start of production from its first factory in Taoyuan, Taiwan (Oct 1999... Read More
Tags:- Foundry
WIN Semiconductors Announces Integrated GaAs Technology for 5G Front-ends
- October 01, 2019
- Win Semiconductors
WIN Semiconductors has announced the combining of an advanced 100 GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best-in-class mmWave perform... Read More
Tags:- Front End Module, GaAs, Front End, 5G
WIN Semi Introduces New GaN Process for Advanced mm-Wave & 5G Applications
- June 05, 2019
- Win Semiconductors
WIN Semiconductors has expanded its GaN portfolio with the release of a 0.15µm-gate technology, the NP15-00. The new process supports emerging mmWave power amplifier (PA) appl... Read More
Tags:- GaN, mm-Wave, 5G
WIN Semi Introduces mm-Wave GaAs Platform for Single Chip 5G Front-End Solutions
- June 04, 2019
- Win Semiconductors
WIN Semiconductors has announced the commercial release of its high integration mmWave GaAs platform, the PIH1-10. Optimized for 5G front-ends, the PIH1-10 technology combines... Read More
Tags:- mm-Wave, GaAs, Front End, 5G
Integrated GaAs Technologies from WIN Semi Delivering Front End Solutions for 5G Applications
- September 26, 2018
- Win Semiconductors
WIN Semiconductors is driving the development and deployment of 5G user equipment and network infrastructure in the sub-6GHz and mmWave frequency bands.... Read More
Tags:- 5G
Latest Products

10 W RF Termination from DC to 40 GHz
Oct 05, 2024

Endura Ruggedized Super-TCXO from 10 to 60 MHz
Oct 05, 2024

50 GHz Low-Profile Flexible Microwave Cable Assembly
Oct 05, 2024

Cellular, PCS, and AWS Repeater Module
Oct 04, 2024
WIN Integrates High Performance 0.1um GaAs pHEMT With Monolithic PIN and Vertical Schottky Diodes
- June 14, 2018
- Win Semiconductors
WIN Semiconductors has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology. The new PIH0-03 platform incorporates monolith... Read More
Tags:- GaAs, Schottky Diode, IMS 2018
WIN Semiconductors Introduces 0.45µm GaN Power Process for 5G Applications
- June 11, 2018
- Win Semiconductors
WIN Semiconductors, world’s largest pure-play compound semiconductor foundry, has expanded its gallium nitride (GaN) process capabilities to include a 0.45µm-gate technology t... Read More
Tags:- GaN, 5G, Massive MIMO
WIN Semiconductors Enhances its 0.25µm GaN Process for Demanding Power Applications through the Ku-Band
- October 12, 2017
- Win Semiconductors
WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has released an optimized version of its 0.25µm gallium nitride (GaN) technology that provide... Read More
Tags:- GaN, EuMW 2017

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