The SUMMIT2629e from Sivers Semiconductors is a Beamforming Front-End IC that operates from 26.5 to 29.5 GHz. It has an eight-channel RF front-end for 5G phased array antenna systems and is fabricated using RF-Silicon on Insulator (RF-SOI) technology. This IC has integrated power amplifiers (PA), low noise amplifiers, T/R switching, beamformers with beam table memory, calibration, gain control, and temperature and power telemetry. It features a four-element dual-polarization TX/RX with independent polarization beam directions. This IC provides a 6-bit full-360° phase shifting and 0.5 dB-step 16 dB range variable gain in each path.
The SUMMIT2629e has extensive on-chip temperature & power sensing and on-chip gain control for temperature compensation. It is available in a WLCSP package and includes a high-speed system peripheral interface (SPI) for control. This IC is ideal for 5G mmWave and 5G phased array antenna systems applications.
