The BTS7203H from NXP Semiconductors is a Dual-Channel Receiver Analog Front-End Module that operates from 2.3 to 2.7 GHz. It has 2 independent receive channels each with a variable gain low noise amplifier (LNA) and switch for high-power Tx signals. The FEM is developed on NXP’s silicon-germanium (SiGe) process and provides a fast switching time between operation modes. In the Tx mode, it delivers up to 37 dBm of power and has a PAPR of 9 dB. In Rx mode, it provides 37 dB with a noise figure of 1.3 dB.

The BTS7203H is matched to 50 O and integrates harmonic and out-of-band filtering which minimizes the layout area in the application. It requires a DC supply of 3.15 to 3.45 V and consumes less than 46 mA of current. This RoHS-compliant FEM is available in an ESD-protected HVQFN32 package that measures 5.0 x 5.0 x 0.85 mm with 32 pins. It is designed for 5G mMIMO, and Wireless Infrastructure applications.

Product Specifications

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Product Details

  • Part Number
    BTS7203H
  • Manufacturer
    NXP Semiconductors
  • Description
    Dual-Channel Receiver Analog Front-End Module from 2.3 to 2.7 GHz

General Parameters

  • Type
    Receiver Module
  • Configuration
    Switch, LNA
  • Application Industry
    Wireless Infrastructure
  • Application
    5G
  • Wireless Standard
    5G
  • Bands
    Single Band
  • Frequency
    2.3 to 2.7 GHz
  • Tx Power
    37 dBm
  • Tx Current
    5.9 to 6.5 mA
  • Voltage
    -0.3 to 6 V
  • Rx Gain
    37 dB
  • Rx Noise Figure
    1.3 to 1.7 dB
  • Rx Current
    46 to 51 mA
  • Package Type
    Surface Mount
  • Package
    Leadframe HVQFN package
  • Dimensions
    5.0 mm x 5.0 mm x 0.85 mm
  • RoHS
    Yes
  • Note
    Temperature: -40 to 105 Degree C (Operating), -40 to 150 Degree C (Storage)

Technical Documents