The PE561221 from pSemi is a 2.4 GHz SOI Wi-Fi front-end module that is based on pSemi's UltraCMOS technology. This is the first FEM to be made on a Silicon on Insulator process. It integrates a low-noise amplifier (LNA), a power amplifier (PA) and two RF switches (SP4T, SP3T) on a single die. This module delivers a high linearity signal and excellent long-packet error vector magnitude (EVM) performance with less than 0.1 dB of gain droop while operating across the entire -40°C to 85°C temperature range. It is available in a compact 16-pin, 2 x 2 mm LGA package ideal for either stand-alone use or in 4 x 4 MIMO and 8 x 8 MIMO modules. It is ideal for Wi-Fi home gateways, routers and set-top boxes.
The 2.4 GHz Wi-Fi FEM is based on pSemi&rsquos UltraCMOS technology platform - a patented, advanced form of SOI. With its excellent RF and microwave properties, SOI is an ideal substrate for integration. When paired with high-volume CMOS manufacturing - the most widely used semiconductor technology - the result is a reliable, repeatable technology platform that offers superior performance compared to other mixed-signal processes. UltraCMOS technology also enables intelligent integration - the unique design ability to integrate RF, digital and analog components on a single die.