TSL8329M

Front End Module by Tagore Technology

Note : Your request will be directed to Tagore Technology.

TSL8329M Image

The TSL8329M from Tagore Technology is a Dual-Channel, Integrated Front-End Module that operates from 2.0 to 4.2 GHz. It has a cascading, two-stage Low Noise Amplifier (LNA) and a GaN based SPDT switch. In high gain mode, the cascaded two-stage LNA and switch have noise figure of 1 dB and provide gain of 32 dB at 3.6 GHz. In low gain mode, one stage of the two-stage LNA is in bypassed, providing 13 dB of gain at a lower current of 45 mA. In transmit operation, when RF inputs are connected to a termination pin, the switch has an insertion loss of 0.45 dB at 3.6 GHz.

The TSL8329M requires a DC supply of +5.0 V and consumes 5 mA of current during power-down mode. It is available in a surface-mount package that measures 6.00 x 6.00 x 0.85 mm and is ideal for SDARS, 4G/5G infrastructure radios, small cells, cellular repeaters, and phased-array radar applications.

Product Specifications

View similar products

Product Details

  • Part Number
    TSL8329M
  • Manufacturer
    Tagore Technology
  • Description
    Dual-Channel RF Front-End Module from 2.0 to 4.2 GHz

General Parameters

  • Type
    Receiver Module
  • Configuration
    Low Noise Amplifier, Switch
  • Switch Configuration
    SPDT
  • Application Industry
    Phased Array Radar, SDARS, Infrastructure Radio
  • Application
    Cellular, Radar, Small Cell, 5G
  • Wireless Standard
    4G/LTE, 5G
  • Bands
    S Band
  • Frequency
    2 to 4.2 GHz
  • Current
    45 to 90 mA
  • Tx IIP3
    18 dB (Low Gain Mode), 35 dB (High Gain Mode)
  • Tx P1dB
    10.5 dB (Low Gain Mode), 20 dB (High Gain Mode)
  • Voltage
    5 to 5.5 V
  • Rx Gain
    13 dB (Low Gain Mode), 32 dB (High Gain Mode)
  • Rx Noise Figure
    0.9 to 1 dB
  • Insertion Loss
    0.45 dB
  • Isolation
    40 dB
  • Package Type
    Surface Mount
  • Package
    40-lead LFCSP
  • Dimensions
    6 x 6 x 0.85 mm
  • Technology
    GaN
  • Grade
    Commercial
  • RoHS
    Yes
  • Note
    RF Input Power:43 dBm ; Operating Temperature:-40 to 105 Degree C ; Storage Temperature:-55 to 150 Degree C

Technical Documents