CHA6251-QKB

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CHA6251-QKB Image

The CHA6251-QKB from United Monolithic Semiconductors is a 3-Stage GaN power amplifier MMIC that operates from 17 to 21.5 GHz. It delivers an output power of 37 dBm (~5 W) with a gain of more than 30 dB and a power-added efficiency (PAE) of 42%. This amplifier is manufactured using a GaN-on-SiC HEMT process. It requires a DC supply of 14 V and consumes 125 mA of current. This RoHS-compliant amplifier is available in a 24-lead QFN package that measures 4 x 4 mm and it is ideal for space and other wide range of microwave applications.

Product Specifications

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Product Details

  • Part Number
    CHA6251-QKB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    3-Stage GaN Power Amplifier MMIC from 17 to 21.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Space
  • Frequency
    17 to 21.5 GHz
  • Gain
    33 to 36 dB
  • Saturated Power
    5 W
  • Input Power
    12 dBm
  • PAE
    37 to 42 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    12 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    12 to 20 V
  • Current Consumption
    60 to 225 mA
  • Technology
    GaN on SiC, HEMT
  • Package Type
    Surface Mount
  • Package
    QFN
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Drain Current at Situration : 800 mA

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