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HVV1011-075L

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The HVV1011-075L from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 49.24 dBm, Power(W) 84 W, Gain 20.5 dB, Power Gain (Gp) 20.5 dB. Tags: Flanged. More details for HVV1011-075L can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1011-075L
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.2 to 1.4 GHz, 84 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    49.24 dBm
  • Power(W)
    84 W
  • Pulsed Width
    32 us (On), 18 us(off), x 48
  • Gain
    20.5 dB
  • Power Gain (Gp)
    20.5 dB
  • Power Added Effeciency
    0.45
  • Input Return Loss
    12 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Input Power
    0.75 W
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.45
  • Drain Leakage Current (Id)
    100 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.28 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Pulse Droop : 0.7 dB

Technical Documents
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