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AM010MH2-BI-R

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The AM010MH2-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 6 GHz, Power 28 dBm, Power(W) 0.63 W, P1dB 27 dBm, Power Gain (Gp) 12 to 15 dB. Tags: Flanged. More details for AM010MH2-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM010MH2-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    HiFET High Voltage GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure, Avionics
  • Application
    PCS, Base Station, WLAN, Repeater, Communication System
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    28 dBm
  • Power(W)
    0.63 W
  • P1dB
    27 dBm
  • Power Gain (Gp)
    12 to 15 dB
  • Supply Voltage
    14 to 16 V
  • Breakdown Voltage - Drain-Source
    22 to 30 V
  • Thermal Resistance
    53 °C/W
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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